Ga(OTf)3-catalyzed Three-component Mannich Reaction in Water Promoted by Ultrasound Irradiation

Ga(OTf)₃‐catalyzed three‐component Mannich reaction of aromatic aldehydes, aromatic amines and cycloketones in water promoted by ultrasound gave the corresponding β‐amino cycloketones in good to excellent yields and good anti selectivities.     

Stabilization of ferromagnetism in Mn doped ZnO with C co-doping

We present a method for stabilizing ferromagnetism in Mn doped ZnO. We find that Mn doped ZnO show anti-ferromagnetic order in the absence of additional carriers. When Mn doped ZnO is co-doped with C atom at O sites ferromagnetic state gets stabilized. The C doping creates holes which leads to stabilization of ferromagnetic state via hole mediated double exchange mechanism.     

Characterization of the carrot defect in 4H-SiC epitaxial layers

Characterization of the epitaxial defect known as the carrot defect was performed in thick 4H-SiC epilayers. A large number of carrot defects have been studied using different experimental techniques such as Nomarski optical microscopy, KOH etching, cathodoluminescence and synchrotron white beam X-ray topography. This has revealed that carrot defects appear in many different shapes and structures in the epilayers. Our results support the previous assignment of the carrot defect as related to a prismatic stacking fault. However, we have observed carrot defects with and without a visible threading dislocation related etch pit in the head region, after KOH etching. Polishing of epilayers in a few μm steps in combination with etching in molten KOH and imaging using Nomarski optical microscope has been used to find the geometry and origin of the carrot defects in different epilayers. The defects were found to originate both at the epi-substrate interface and during the epitaxial growth. Different sources of the carrot defect have been observed at the epi-substrate interface, which result in different structures and surfaces appearance of the defect in the epilayer. Furthermore, termination of the carrot defect inside the epilayer and the influence of substrate surface damage and growth conditions on the density of carrot defects are studied.     

Common Pathway for K562 Cells Endocytosis and Release of Gac-Tf and Ga2-Tf via a Transferrin Receptor

There has been an increasing interest in the use of gallium in anticancer activity. However, whether the uptakes of two species of transferrin, including digallium transferrin (Ga₂‐Tf) and the C‐terminal monogallium transferrin (Ga_C‐Tf) by cells, are different is not well understood. In this work the mechanism of both species passing in and out K562 cells has been established by using ¹²⁵I‐labeled transferrin. There were about (1.5±0.08)×10⁵ binding sites per cell surface. Both Ga₂‐Tf and Ga_C‐Tf were recycled to the cell exterior with a protracted endocytic cycle compared to apotransferrin (apoTf). The cycling time from the internalization to release was calculated about t_1/2= (3.15±0.055) min for apoTf, t_1/2= (4.69±0.09) min for Ga₂‐Tf and t_1/2= (4.78±0.15) min for Ga_C‐Tf. The result implies that metal dissociating from transferrin in acidic endosomes was likely to be the key step. Both Ga₂‐Tf and Ga_C‐Tf into K562 cells are transferrin receptor‐mediated process with a similar rate of endocytosis and release. Our present observations provide useful information for better targeted drugs in specific therapy.     

Influence of catalyst binder on the acidity and activity/selectivity of Ga/H-ZSM-5 zeolite in propane aromatization

The acidity and initial and time-on-stream activity in propane aromatization (at 550°C, space velocity of 3100 cm³g⁻¹ _(zeolite)h⁻¹) of Ga-impregnated H-ZSM-5 zeolite without or with binders (50 wt%), such as silica, alumina and kaolin, have been investigated. Both the acidity and catalytic activity of the zeolite are influenced by the presence of binder in the catalyst, depending upon the binder. The influence is found to be lowest for alumina and highest for kaolin. Among the binders, alumina is the most preferred binder for the zeolite catalyst.     

Determination of thermal wave reflection coefficient to better estimate defect depth using pulsed thermography

Thermography is a promising method for detecting subsurface defects, but accurate measurement of defect depth is still a big challenge because thermographic signals are typically corrupted by imaging noise and affected by 3D heat conduction. Existing methods based on numerical models are susceptible to signal noise and methods based on analytical models require rigorous assumptions that usually cannot be satisfied in practical applications. This paper presents a new method to improve the measurement accuracy of subsurface defect depth through determining the thermal wave reflection coefficient directly from observed data that is usually assumed to be pre-known. This target is achieved through introducing a new heat transfer model that includes multiple physical parameters to better describe the observed thermal behaviour in pulsed thermographic inspection. Numerical simulations are used to evaluate the performance of the proposed method against four selected state-of-the-art methods. Results show that the accuracy of depth measurement has been improved up to 10% when noise level is high and thermal wave reflection coefficients is low. The feasibility of the proposed method in real data is also validated through a case study on characterising flat-bottom holes in carbon fibre reinforced polymer (CFRP) laminates which has a wide application in various sectors of industry.     

TEM investigation of the formation mechanism of deformation twins in Fe–Mn–Si–Al TWIP steels

The microstructure of a Fe–Mn–Si–Al twinning-induced plasticity (TWIP) steel exhibiting remarkable work hardening rate under uniaxial tensile deformation was investigated using transmission electron microscopy to uncover the mechanism(s) controlling the nucleation and growth of the mechanically induced twins. The results show that the stair-rod cross-slip deviation mechanism is necessary for the formation of the twins, while large extrinsic stacking faults homogenously distributed within the grains could act as preferential sources for the activation of the deviation process. The influence of such features on the thickness and strength of the twins and the resulting mechanical behaviour is discussed and compared to similar works recently performed on Fe–Mn–C TWIP steels.     

Towards understanding the carbon trapping mechanism in copper by investigating the carbon-vacancy interaction

We propose a vacancy trapping mechanism for carbon-vacancy (C-V) complex formation in copper (Cu) according to the first-principles calculations of the energetics and kinetics of C-V interaction. Vacancy reduces charge density in its vicinity to induce C nucleation. A monovacancy is capable of trapping as many as four C atoms to form CnV (n=1,2,3,4) complexes. A single C atom prefers to interact with neighboring Cu at a vacancy with a trapping energy of 0.21 eV. With multiple C atoms added, they are preferred to bind with each other to form covalent-like bonds despite of the metallic Cu environment. For the CnV complexes, C2V is the major one due to its lowest average trapping energy (1.31 eV). Kinetically, the formation of the CnV complexes can be ascribed to the vacancy mechanism due to the lower activation energy barrier and the larger diffusion coefficient of vacancy than those of the interstitial C.     

Resistivity control of sputtered amorphous-silicon by ion-implantation

The resistivity of a hydrogenated sputtered amorphous-silicon is controlled by using room temperature implantation of P⁺. It is found that the defects produced by implantation can be minimized by annealing at 300°C in an H₂ atmosphere, and also found that there is a threshold implanted dose, beyond which the resistivity begins to be controlled by changing the dose.